sot223 npn silicon planar medium power transistor issue 3 ? november 1995 j complementary type ? fzt593 partmarking detail ? FZT493 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 5v peak pulse current i cm 2a continuous collector current i c 1a base current i b 200 ma power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. typ. max. unit conditions. breakdown voltages v (br)cbo 120 v i c =100 m a v (br)ceo 100 v i c =10ma* v (br)ebo 5v i e =100 m a cut-off currents i cbo 100 na v cb =100v i ebo 100 na v eb =4v i ces 100 na v ces =100v collector-emitter saturation voltage v ce(sat) 0.3 0.6 v v i c =500ma, i b =50ma* i c =1a, i b =100ma* base-emitter saturation voltage v be(sat) 1.15 v i c =1a, i b =100ma* base-emitter turn-on voltage v be(on) 1.0 v i c =1a, v ce =10v* static forward current h fe 100 100 80 30 300 i c =1ma, v ce =10v i c =250ma, v ce =10v* i c =500ma, v ce =10v* i c = 1a, v ce =10v* transition frequency f t 150 mhz i c =50ma, v ce =10v, f =100mhz output capacitance c obo 10 pf v cb =10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% for typical characteristics graphs see fmmt493 datasheet FZT493 c c e b 3 - 190
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